Xiaomi Vice President Wang Xiang Shares More Details About Upcoming Mi 9

Xiaomi is all set to launch its two new devices including the Redmi Note 7 in India on February 28 and the Mi 9 on February 20 in China. Xiaomi will also launch its flagship smartphone Mi 9 globally on February 24 at MWC in Barcelona Spain. Notably, Samsung will also take the stage on February 20 to launch its much awaited Galaxy S10 line up, which includes the Galaxy S10, S10e, and S10+.

In our previous post, we have covered almost details about the upcoming Mi 9 smartphone. However, earlier today a post from Xiaomi’s Vice President Wang Xiang revealed that Xiaomi will also launch a high-end version, maybe the Explorer Edition of the Mi 9 with Snapdragon 855 SoC.

Now, this is confirmed that Xiaomi will launch a regular and a high-end version of its Mi 9 with Snapdragon 855 at the same date. In addition to this, Xiaomi’s Vice President Wang Xiang has now shared some new details about the upcoming high-end variant of the Mi 9.

Wang shared some new images showing up the performance of the upcoming Mi 9 with Snapdragon 855 SoC. Wang also shared the Antutu benchmark score showing up the Mi 9 getting 3,87,851 score. His tweet also revealed that Mi 9 will be powered by word’s first 7nm process technology SoC, the SD855.

The 7nm process technology is said to provide 45% CPU performance leap, 2.84GHz maximum clock speed, 20% faster graphics rendering and more. The full process will be base on the new 485 microarchitecture. The tweet also reveals that the upcoming Mi 9 will include an Adreno 640 GPU with first true HDR mobile gaming.

For more details, you can check out the Wang Xiang tweet above.